2SA1930,LBS2DIAQ(J

Toshiba Semiconductor and Storage

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2SA1930,LBS2DIAQ(J

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TO-220NIS

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Description:

TRANS PNP 180V 2A TO220NIS

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Operating Temperature	150°C (TJ)
Frequency - Transition	200MHz
Current - Collector (Ic) (Max)	2 A
Vce Saturation (Max) @ Ib, Ic	1V @ 100mA, 1A
Mounting Type	Through Hole
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	180 V
Supplier Device Package	TO-220NIS
Series	-
Transistor Type	PNP
Package / Case	TO-220-3 Full Pack
Power - Max	2 W
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	5µA (ICBO)
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Base Product Number	2SA1930