2SB1481(TOJS,Q,M)

Toshiba Semiconductor and Storage

Product No:

2SB1481(TOJS,Q,M)

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TO-220NIS

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Description:

TRANS PNP 100V 4A TO220NIS

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Operating Temperature	150°C (TJ)
Frequency - Transition	-
Current - Collector (Ic) (Max)	4 A
Vce Saturation (Max) @ Ib, Ic	1.5V @ 6mA, 3A
Mounting Type	Through Hole
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	100 V
Supplier Device Package	TO-220NIS
Series	-
Transistor Type	PNP
Package / Case	TO-220-3 Full Pack
Power - Max	2 W
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	2µA (ICBO)
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 3A, 2V
Base Product Number	2SB1481