2SD1111-AA

onsemi

Product No:

2SD1111-AA

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3-NP

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Description:

2SD1111 - NPN EPITAXIAL PLANAR S

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Operating Temperature	150°C (TJ)
Frequency - Transition	200MHz
Current - Collector (Ic) (Max)	700 mA
Vce Saturation (Max) @ Ib, Ic	1.2V @ 100µA, 100mA
Mounting Type	Through Hole
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	3-NP
Series	-
Transistor Type	NPN - Darlington
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Power - Max	600 mW
Mfr	onsemi
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	5000 @ 50mA, 2V