APTM100H80FT1G

Microsemi Corporation

Product No:

APTM100H80FT1G

Manufacturer:

Package:

SP1

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Description:

MOSFET 4N-CH 1000V 11A SP1

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	4 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	3876pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	960mOhm @ 9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 1mA
Supplier Device Package	SP1
Drain to Source Voltage (Vdss)	1000V (1kV)
Series	-
Package / Case	SP1
Technology	MOSFET (Metal Oxide)
Power - Max	208W
Mfr	Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C	11A
Package	Bulk
Base Product Number	APTM100