AS1FJ-M3/H

Vishay General Semiconductor - Diodes Division

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AS1FJ-M3/H

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DO-219AB (SMF)

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Description:

DIODE AVAL 600V 1.5A DO219AB

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Speed	Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F	8.8pF @ 4V, 1MHz
Reverse Recovery Time (trr)	1.3 µs
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	DO-219AB (SMF)
Current - Reverse Leakage @ Vr	5 µA @ 600 V
Series	Automotive, AEC-Q101
Package / Case	DO-219AB
Technology	Avalanche
Voltage - Forward (Vf) (Max) @ If	1.15 V @ 1.5 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	1.5A