EPC2101

EPC

Product No:

EPC2101

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Die

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GAN TRANS ASYMMETRICAL HALF BRID

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 30V, 1200pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	2.7nC @ 5V, 12nC @ 5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	60V
Series	eGaN®
Package / Case	Die
Technology	GaNFET (Gallium Nitride)
Power - Max	-
Mfr	EPC
Current - Continuous Drain (Id) @ 25°C	9.5A, 38A
Package	Tape & Reel (TR)
Base Product Number	EPC210