EPC2106ENGRT

EPC

Product No:

EPC2106ENGRT

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Die

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Description:

GAN TRANS 2N-CH 100V BUMPED DIE

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	0.73nC @ 5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	70mOhm @ 2A, 5V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	2.5V @ 600µA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	100V
Series	eGaN®
Package / Case	Die
Technology	GaNFET (Gallium Nitride)
Power - Max	-
Mfr	EPC
Current - Continuous Drain (Id) @ 25°C	1.7A
Package	Tape & Reel (TR)
Base Product Number	EPC210