ES1JLW RVG

Taiwan Semiconductor Corporation

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ES1JLW RVG

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SOD-123W

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Description:

DIODE GEN PURP 600V 1A SOD123W

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	20pF @ 4V, 1MHz
Reverse Recovery Time (trr)	35 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	SOD-123W
Current - Reverse Leakage @ Vr	5 µA @ 600 V
Series	-
Package / Case	SOD-123W
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 1 A
Mfr	Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	1A