ESH1JMHRSG

Taiwan Semiconductor Corporation

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ESH1JMHRSG

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Micro SMA

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Description:

DIODE GEN PURP 600V 1A MICRO SMA

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	3pF @ 4V, 1MHz
Reverse Recovery Time (trr)	25 ns
Mounting Type	Surface Mount
Product Status	Obsolete
Supplier Device Package	Micro SMA
Current - Reverse Leakage @ Vr	1 µA @ 600 V
Series	Automotive, AEC-Q101
Package / Case	2-SMD, Flat Lead
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 1 A
Mfr	Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	-55°C ~ 150°C
Current - Average Rectified (Io)	1A