FCD3400N80Z

Fairchild Semiconductor

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FCD3400N80Z

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Package:

TO-252, (D-Pak)

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Description:

POWER FIELD-EFFECT TRANSISTOR, N

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	9.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.4Ohm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 200µA
Supplier Device Package	TO-252, (D-Pak)
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	32W (Tc)
Series	SuperFET® II
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk