FCP165N65S3R0

Fairchild Semiconductor

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FCP165N65S3R0

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Package:

TO-220-3

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FCP165N65S3R0 - POWER MOSFET, N-

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	165mOhm @ 9.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.5V @ 440mA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	154W (Tc)
Series	SuperFET® III
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk