FDB0300N1007L

Fairchild Semiconductor

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FDB0300N1007L

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Package:

TO-263-7

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Description:

MOSFET N-CH 100V 200A TO263-7

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8295 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	113 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3mOhm @ 26A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263-7
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.8W (Ta), 250W (Tc)
Series	PowerTrench®
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Bulk