FDB12N50TM

Fairchild Semiconductor

Product No:

FDB12N50TM

Manufacturer:

Package:

D2PAK (TO-263)

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	650mOhm @ 6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	D2PAK (TO-263)
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	165W (Tc)
Series	UniFET™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	11.5A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk