FDB6670S

Fairchild Semiconductor

Product No:

FDB6670S

Manufacturer:

Package:

TO-263AB

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2639 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.5mOhm@ 31A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 1mA
Supplier Device Package	TO-263AB
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	62.5W (Tc)
Series	PowerTrench®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	62A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk