FDC5661N

Fairchild Semiconductor

Product No:

FDC5661N

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Package:

TSOT-23-6

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Description:

POWER FIELD-EFFECT TRANSISTOR

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	763 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	47mOhm @ 4.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TSOT-23-6
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	1.6W (Ta)
Series	PowerTrench®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	4.3A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk