FDFME2P823ZT

Fairchild Semiconductor

Product No:

FDFME2P823ZT

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Package:

6-MicroFET (1.6x1.6)

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Description:

2.6A, 20V, P-CHANNEL MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	405 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	7.7 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	142mOhm @ 2.3A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	6-MicroFET (1.6x1.6)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.4W (Ta)
Series	PowerTrench®
Package / Case	6-UFDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Bulk
Base Product Number	FDFME2