FDFS2P753Z

onsemi

Product No:

FDFS2P753Z

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Package:

8-SOIC

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Description:

POWER FIELD-EFFECT TRANSISTOR, 3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	455 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	115mOhm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.6W (Ta)
Series	PowerTrench®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Vgs (Max)	±25V
Package	Bulk