FDMS3669S

Fairchild Semiconductor

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FDMS3669S

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Package:

8-PQFN (5x6)

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Description:

SMALL SIGNAL FIELD-EFFECT TRANSI

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual) Asymmetrical
Input Capacitance (Ciss) (Max) @ Vds	1605pF @ 15V, 2060pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V, 34nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.7V @ 250µA, 2.5V @ 1mA
Supplier Device Package	8-PQFN (5x6)
Drain to Source Voltage (Vdss)	30V
Series	PowerTrench®
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Power - Max	1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc)
Package	Bulk
Base Product Number	FDMS3669