FDS6900S

Fairchild Semiconductor

Product No:

FDS6900S

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Package:

8-SOIC

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	771pF @ 15V, 1238pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	11nC @ 5V, 17nC @ 5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA, 3V @ 1mA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	30V
Series	PowerTrench®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	900mW (Ta)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	6.9A (Ta), 8.2A (Ta)
Package	Bulk
Base Product Number	FDS69