FF11MR12W1M1B11BOMA1

Infineon Technologies

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Module

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MOSFET 2N-CH 1200V 100A MODULE

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	7950pF @ 800V
Gate Charge (Qg) (Max) @ Vgs	250nC @ 15V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	11mOhm @ 100A, 15V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5.55V @ 40mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	CoolSiC™+
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	-
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	100A
Package	Tray
Base Product Number	FF11MR12