FF200R12KT3EHOSA1

Infineon Technologies

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FF200R12KT3EHOSA1

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Module

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IGBT MODULE 1200V 1050W

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Operating Temperature	-40°C ~ 125°C
NTC Thermistor	No
Configuration	2 Independent
Input Capacitance (Cies) @ Vce	14 nF @ 25 V
Mounting Type	Chassis Mount
Product Status	Not For New Designs
Voltage - Collector Emitter Breakdown (Max)	1200 V
Supplier Device Package	Module
Series	C
Input	Standard
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 200A
Package / Case	Module
Power - Max	1050 W
Mfr	Infineon Technologies
Current - Collector Cutoff (Max)	5 mA
Package	Tray
IGBT Type	-
Base Product Number	FF200R12