FF6MR12W2M1HPB11BPSA1

Infineon Technologies

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Module

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LOW POWER EASY

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	Silicon Carbide (SiC)
Configuration	2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14700pF @ 800V
Gate Charge (Qg) (Max) @ Vgs	496nC @ 15V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	5.63mOhm @ 200A, 15V
Product Status	Active
Vgs(th) (Max) @ Id	5.55V @ 80mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1200V
Series	HEXFET®
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	-
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	200A (Tj)
Package	Tray