FQS4900TF

Fairchild Semiconductor

Product No:

FQS4900TF

Manufacturer:

Package:

8-SOIC

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	2.1nC @ 5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	550mOhm @ 650mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.95V @ 20mA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	60V, 300V
Series	QFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	2W
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	1.3A, 300mA
Package	Bulk
Base Product Number	FQS4900