HN3C10FUTE85LF

Toshiba Semiconductor and Storage

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HN3C10FUTE85LF

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Package:

US6

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Description:

RF TRANS 2 NPN 12V 7GHZ US6

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Operating Temperature	-
Frequency - Transition	7GHz
Current - Collector (Ic) (Max)	80mA
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	12V
Supplier Device Package	US6
Series	-
Transistor Type	2 NPN (Dual)
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	200mW
Mfr	Toshiba Semiconductor and Storage
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Package	Tape & Reel (TR)
Gain	11.5dB
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 20mA, 10V
Base Product Number	HN3C10