IAUC60N04S6L030HATMA1

Infineon Technologies

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PG-TDSON-8-56

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IAUC60N04S6L030HATMA1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	2128pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 25µA
Supplier Device Package	PG-TDSON-8-56
Drain to Source Voltage (Vdss)	40V
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	75W (Tc)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	60A (Tj)
Package	Tape & Reel (TR)
Base Product Number	IAUC60