IAUC60N04S6N050HATMA1

Infineon Technologies

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PG-TDSON-8-57

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IAUC60N04S6N050HATMA1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	1027pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 13µA
Supplier Device Package	PG-TDSON-8-57
Drain to Source Voltage (Vdss)	40V
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	52W (Tc)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	60A (Tj)
Package	Tape & Reel (TR)
Base Product Number	IAUC60