IDC08S120EX1SA3

Infineon Technologies

Product No:

IDC08S120EX1SA3

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Package:

Sawn on foil

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Description:

DIODE SIL CARB 1.2KV 7.5A WAFER

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Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	380pF @ 1V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Surface Mount
Product Status	Obsolete
Supplier Device Package	Sawn on foil
Current - Reverse Leakage @ Vr	180 µA @ 1200 V
Series	CoolSiC™+
Package / Case	Die
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 7.5 A
Mfr	Infineon Technologies
Voltage - DC Reverse (Vr) (Max)	1200 V
Package	Bulk
Current - Average Rectified (Io)	7.5A
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	IDC08S120