IDC08S60CEX1SA3

Infineon Technologies

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IDC08S60CEX1SA3

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Die

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Description:

DIODE SIL CARBIDE 600V 8A DIE

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Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	310pF @ 1V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Surface Mount
Product Status	Obsolete
Supplier Device Package	Die
Current - Reverse Leakage @ Vr	100 µA @ 600 V
Series	CoolSiC™+
Package / Case	Die
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 8 A
Mfr	Infineon Technologies
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Bulk
Current - Average Rectified (Io)	8A
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	IDC08S60