IDH03G65C5XKSA1

Infineon Technologies

Product No:

IDH03G65C5XKSA1

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Package:

PG-TO220-2-2

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Description:

DIODE SIL CARB 650V 3A TO220-2-2

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Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	100pF @ 1V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	PG-TO220-2-2
Current - Reverse Leakage @ Vr	50 µA @ 600 V
Series	CoolSiC™+
Package / Case	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 3 A
Mfr	Infineon Technologies
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Bulk
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	3A