IDT10S60C

Infineon Technologies

Product No:

IDT10S60C

Manufacturer:

Package:

PG-TO220-2-2

Batch:

Datasheet:

Description:

DIODE SIL CARB 600V 10A TO220-2

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	480pF @ 1V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	PG-TO220-2-2
Current - Reverse Leakage @ Vr	140 µA @ 600 V
Series	thinQ!™
Package / Case	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A
Mfr	Infineon Technologies
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Bulk
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	10A (DC)