IPD65R660CFD

Infineon Technologies

Product No:

IPD65R660CFD

Manufacturer:

Package:

PG-TO252-3-313

Batch:

Datasheet:

Description:

IPD65R660 - 650V AND 700V COOLMO

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	660mOhm @ 2.1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 200µA
Supplier Device Package	PG-TO252-3-313
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	62.5W (Tc)
Series	CoolMOS™ CFD2
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk