IPG16N10S4-61

Infineon Technologies

Product No:

IPG16N10S4-61

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Package:

PG-TDSON-8-4

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Description:

IPG16N10 - 75V-100V N-CHANNEL AU

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	61mOhm @ 16A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 9µA
Supplier Device Package	PG-TDSON-8-4
Drain to Source Voltage (Vdss)	100V
Series	OptiMOS™
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	29W (Tc)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Package	Bulk
Base Product Number	IPG16N