IPI80P04P4L04AKSA1

Infineon Technologies

Product No:

IPI80P04P4L04AKSA1

Manufacturer:

Package:

PG-TO262-3-1

Batch:

Datasheet:

Description:

MOSFET P-CH 40V 80A TO262-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	176 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.7mOhm @ 80A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	PG-TO262-3-1
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	125W (Tc)
Series	Automotive, AEC-Q101, OptiMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Vgs (Max)	+5V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	IPI80P