IRD3CH9DB6

Infineon Technologies

Product No:

IRD3CH9DB6

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Die

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Description:

DIODE GEN PURP 1.2KV 10A DIE

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	-
Reverse Recovery Time (trr)	154 ns
Mounting Type	Surface Mount
Product Status	Obsolete
Supplier Device Package	Die
Current - Reverse Leakage @ Vr	200 nA @ 1200 V
Series	-
Package / Case	Die
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	2.7 V @ 10 A
Mfr	Infineon Technologies
Voltage - DC Reverse (Vr) (Max)	1200 V
Package	Bulk
Current - Average Rectified (Io)	10A
Operating Temperature - Junction	-40°C ~ 150°C
Base Product Number	IRD3CH9