IRF7313TRPBFXTMA1

Infineon Technologies

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IRF7313TRPBFXTMA1

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Package:

PG-DSO-8-902

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PLANAR <=40V

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Standard
Configuration	2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	29mOhm @ 5.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	PG-DSO-8-902
Drain to Source Voltage (Vdss)	30V
Series	HEXFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Ta)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	6.5A (Ta)
Package	Tape & Reel (TR)