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IRF8910TRPBFXTMA1

Infineon Technologies

Product No:

IRF8910TRPBFXTMA1

Manufacturer:

Infineon Technologies

Package:

PG-DSO-8-902

Batch:

-

Datasheet:

-

Description:

TRENCH <= 40V

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Standard
Configuration 2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 13.4mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.55V @ 250µA
Supplier Device Package PG-DSO-8-902
Drain to Source Voltage (Vdss) 20V
Series HEXFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 2W (Ta)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Package Tape & Reel (TR)