IRF9953

Infineon Technologies

Product No:

IRF9953

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Package:

8-SO

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Description:

MOSFET 2P-CH 30V 2.3A 8-SOIC

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	250mOhm @ 1A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	30V
Series	HEXFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	2W
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	2.3A
Package	Tube
Base Product Number	IRF995