IRFHE4250DTRPBF

International Rectifier

Product No:

IRFHE4250DTRPBF

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Package:

32-PQFN (6x6)

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Description:

HEXFET POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1735pF @ 13V, 4765pF @ 13V
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V, 53nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 35µA, 2.1V @ 100µA
Supplier Device Package	32-PQFN (6x6)
Drain to Source Voltage (Vdss)	25V
Series	HEXFET®
Package / Case	32-PowerVFQFN
Technology	MOSFET (Metal Oxide)
Power - Max	156W (Tc)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	86A (Tc), 303A (Tc)
Package	Bulk
Base Product Number	IRFHE4250