Infineon Technologies
Product No:
IRFHM8363TRPBF
Manufacturer:
Package:
8-PQFN (3.3x3.3), Power33
Batch:
-
Datasheet:
-
Description:
MOSFET 2N-CH 30V 11A 8PQFN
Quantity:
Delivery:
Payment:
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | Logic Level Gate |
Configuration | 2 N-Channel (Dual) |
Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V |
Product Status | Not For New Designs |
Vgs(th) (Max) @ Id | 2.35V @ 25µA |
Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
Drain to Source Voltage (Vdss) | 30V |
Series | HEXFET® |
Package / Case | 8-PowerVDFN |
Technology | MOSFET (Metal Oxide) |
Power - Max | 2.7W |
Mfr | Infineon Technologies |
Current - Continuous Drain (Id) @ 25°C | 11A |
Package | Tape & Reel (TR) |
Base Product Number | IRFHM8363 |