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NP29N06QDK-E1-AY

Renesas Electronics America Inc

Product No:

NP29N06QDK-E1-AY

Package:

8-HSON (5x5.4)

Batch:

-

Datasheet:

-

Description:

ABU / MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-HSON (5x5.4)
Drain to Source Voltage (Vdss) 60V
Series Automotive, AEC-Q101
Package / Case 8-PowerLDFN
Technology MOSFET (Metal Oxide)
Power - Max 1W (Ta), 44W (Tc)
Mfr Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Package Tape & Reel (TR)
Base Product Number NP29