QJD1210011

Powerex Inc.

Product No:

QJD1210011

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Module

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Description:

MOSFET 2N-CH 1200V 100A SIC

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	10200pF @ 800V
Gate Charge (Qg) (Max) @ Vgs	500nC @ 20V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	25mOhm @ 100A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 10mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	900W
Mfr	Powerex Inc.
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Package	Bulk
Base Product Number	QJD1210