RGF1KHE3_B/I

Vishay General Semiconductor - Diodes Division

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RGF1KHE3_B/I

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Package:

DO-214BA (GF1)

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Description:

DIODE GEN PURP 800V 1A DO214BA

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr)	500 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	DO-214BA (GF1)
Current - Reverse Leakage @ Vr	5 µA @ 800 V
Series	Automotive, AEC-Q101, Superectifier®
Package / Case	DO-214BA
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 1 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	800 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	1A
Operating Temperature - Junction	-65°C ~ 175°C
Base Product Number	RGF1K