SE30NJ-M3/I

Vishay General Semiconductor - Diodes Division

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SE30NJ-M3/I

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DFN3820A

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Description:

DIODE GEN PURP 600V 3A DFN3820A

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Speed	Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F	19pF @ 4V, 1MHz
Reverse Recovery Time (trr)	1.5 µs
Mounting Type	Surface Mount, Wettable Flank
Product Status	Active
Supplier Device Package	DFN3820A
Current - Reverse Leakage @ Vr	10 µA @ 600 V
Series	Automotive, AEC-Q101
Package / Case	2-VDFN
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 3 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	3A