SEG10FGHM3/I

Vishay General Semiconductor - Diodes Division

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SEG10FGHM3/I

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DO-219AB (SMF)

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DIODE GEN PURP 400V 1A DO219AB

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Speed	Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F	7.3pF @ 4V, 1MHz
Reverse Recovery Time (trr)	1.2 µs
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	DO-219AB (SMF)
Current - Reverse Leakage @ Vr	5 µA @ 400 V
Series	Automotive, AEC-Q101
Package / Case	DO-219AB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 700 mA
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	400 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	-55°C ~ 175°C
Current - Average Rectified (Io)	1A