TQM110NB04DCR RLG

Taiwan Semiconductor Corporation

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TQM110NB04DCR RLG

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Package:

8-PDFNU (5x6)

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Description:

40V, 50A, DUAL N-CHANNEL POWER M

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1354pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	11mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 250µA
Supplier Device Package	8-PDFNU (5x6)
Drain to Source Voltage (Vdss)	40V
Series	Automotive, AEC-Q101
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2.5W (Ta), 58W (Tc)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 50A (Tc)
Package	Tape & Reel (TR)
Base Product Number	TQM110