TSM085NB03DCR RLG

Taiwan Semiconductor Corporation

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TSM085NB03DCR RLG

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Package:

8-PDFNU (5x6)

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Description:

30V, 51A, DUAL N-CHANNEL POWER M

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1091pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.5mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-PDFNU (5x6)
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Ta), 40W (Tc)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 51A (Tc)
Package	Tape & Reel (TR)
Base Product Number	TSM085