WeEn Semiconductors
Product No:
WNSC04650T6J
Manufacturer:
Package:
5-DFN (8x8)
Batch:
-
Description:
DIODE SIL CARBIDE 650V 4A 5DFN
Quantity:
Delivery:
Payment:
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Speed | No Recovery Time > 500mA (Io) |
Capacitance @ Vr, F | 141pF @ 1V, 1MHz |
Reverse Recovery Time (trr) | 0 ns |
Mounting Type | Surface Mount |
Product Status | Obsolete |
Supplier Device Package | 5-DFN (8x8) |
Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
Series | - |
Package / Case | 4-VSFN Exposed Pad |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
Mfr | WeEn Semiconductors |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Package | Tape & Reel (TR) |
Current - Average Rectified (Io) | 4A |
Operating Temperature - Junction | 175°C (Max) |
Base Product Number | WNSC0 |