1N5406GHB0G

Taiwan Semiconductor Corporation

Product No:

1N5406GHB0G

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Package:

DO-201AD

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Description:

DIODE GEN PURP 600V 3A DO201AD

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Speed	Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F	25pF @ 4V, 1MHz
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	DO-201AD
Current - Reverse Leakage @ Vr	5 µA @ 600 V
Series	Automotive, AEC-Q101
Package / Case	DO-201AD, Axial
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V @ 3 A
Mfr	Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Bulk
Current - Average Rectified (Io)	3A
Operating Temperature - Junction	-55°C ~ 150°C
Base Product Number	1N5406