1N6484-E3/97

Vishay General Semiconductor - Diodes Division

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1N6484-E3/97

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DO-213AB

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Description:

DIODE GEN PURP 1KV 1A DO213AB

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Speed	Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F	8pF @ 4V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	DO-213AB
Current - Reverse Leakage @ Vr	10 µA @ 1000 V
Series	SUPERECTIFIER®
Package / Case	DO-213AB, MELF (Glass)
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	1000 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	1A
Operating Temperature - Junction	-65°C ~ 175°C
Base Product Number	1N6484