1N8026-GA

GeneSiC Semiconductor

Product No:

1N8026-GA

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Package:

TO-257

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Description:

DIODE SIL CARBIDE 1.2KV 8A TO257

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Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	237pF @ 1V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Through Hole
Product Status	Obsolete
Supplier Device Package	TO-257
Current - Reverse Leakage @ Vr	10 µA @ 1200 V
Series	-
Package / Case	TO-257-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 2.5 A
Mfr	GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max)	1200 V
Package	Tube
Current - Average Rectified (Io)	8A
Operating Temperature - Junction	-55°C ~ 250°C
Base Product Number	1N8026